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| PRELIMINARY DATA SHEET 3.2 V, 2 W, L&S BAND NE5520279A MEDIUM POWER SILICON LD-MOSFET FEATURES * LOW COST PLASTIC SURFACE MOUNT PACKAGE: 5.7x5.7x1.1 mm MAX * HIGH OUTPUT POWER: +32 dBm TYP 5.7 Max 0.6 0.15 OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE 79A 4.2 Max 1.5 0.2 Source Source Gate Drain 0.8 0.15 4.4 Max * HIGH POWER ADDED EFFICIENCY: 45% TYP at 1.8 GHz * SINGLE SUPPLY: 2.4 to 6.0 V 0.9 0.2 A 0.4 0.15 5.7 Max 1.0 Max 0.8 Max 3.6 0.2 DESCRIPTION The NE5520279A is an N-Channel silicon power MOSFET specially designed as the transmission power amplifier for 3.2 V DCS1800 handsets. It can be operated at up to 6 V for higher power, Fixed Wireless Access applications. Die are manufactured using NEC's NEWMOS technology (NEC's 0.6 m WSi gate lateral MOSFET) and housed in a surface mount package. APPLICATIONS * DIGITAL CELLULAR PHONES: 3.2 V GSM/DCS1800 Class 1 Handsets * 0.7-2.5 GHz FIXED WIRELESS ACCESS * RETAIL BUSINESS RADIO * SPECIAL MOBILE RADIO ELECTRICAL CHARACTERISTICS (TA PART NUMBER PACKAGE OUTLINE SYMBOLS POUT GL CHARACTERISTICS Output Power Linear Gain1 Power Added Efficiency Operating Drain Current Gate-to-Source Leakage Current Drain-to-Source Leakage Current Gate Threshold Voltage Transconductance Drain-to-Source Breakdown Voltage Thermal Resistance = 25C) NE5520279A 79A UNITS dBm dB % mA nA nA V S V C/W 15 1.0 1.4 1.3 18 10 MIN 30.5 TYP 32.0 10 45 800 100 100 2.0 VGSS = 5.0 V VDSS = 8.5 V VDS = 3.5 V, IDS = 1 mA VDS = 3.5 V, IDS = 300 mA IDSS = 10 A Channel-to-Case MAX TEST CONDITIONS f = 1.8 GHz, VDS = 3.2 V, IDSQ = 300 mA, PIN = 25 dBm, except PIN = 10 dBm for Linear Gain1 Functional Characteristics ADD ID IGSS IDSS VTH gm BVDSS RTH Notes: 1. DC performance is tested 100%. Several samples per wafer are tested for RF performance. Wafer rejection criteria for standard devices is 1 reject for several samples. Electrical DC Characteristics California Eastern Laboratories 0.2 0.1 1.2 Max * HIGH LINEAR GAIN: 10 dB TYP @ 1.8 GHz 2 Gate Drain NE5520279A ABSOLUTE MAXIMUM RATINGS1 (TA = 25 C) SYMBOLS VDS VGS ID ID PT TCH TSTG PARAMETERS Drain Supply Voltage Gate Supply Voltage Drain Current Drain Current (Pulse Test)2 Total Power Dissipation Channel Temperature Storage Temperature UNITS V V A A W C C RATINGS 8.5 5 1.0 1.5 10 125 -55 to +125 RECOMMENDED OPERATING LIMITS SYMBOLS VDS VGS IDS PIN Note: 1. Pulse Test PARAMETERS Drain to Source Voltage Gate Supply Voltage Drain Current1 Input Power UNITS V V A dBm TYP 3.0 2.0 0.8 25 MAX 8.0 3.0 1.0 26 Note: 1. Operation in excess of any one of these parameters may result in permanent damage. 2. Duty Cycle 50%, Ton = 1 ms. ORDERING INFORMATION PART NUMBER NE5520279A-T1A QTY 5 K/Reel TYPICAL PERFORMANCE CURVES TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 25 (TA = 25C) DRAIN CURRENT vs. DRAIN VOLTAGE 1.00 VGS = 3.75 V 3.55 Total Power Dissipation, PD (W) 20 0.8 Drain Current, ID (A) 3.35 3.15 15 0.6 2.95 2.75 10 RTH = 10 C/W 5 0.4 2.55 2.35 0.2 2.15 1.95 1.75 0 0 25 C 0 50 100 150 0 2 4 6 8 Case Temperature, TC (C) Drain Voltage, VD (V) 2.00 1.00 35 PO = 32 dBm 30 VDS = 3.5 V IDQ = 400 mA freq. = 1.8 GHz 2500 Transconductance, GM (ms) Output Power, POUT (dBm) 1.2 Drain Current, ID (A) POUT 1500 25 0.8 20 IDS 1000 100 0.4 15 500 50 0 1.00 1.4 1.8 2.2 0.00 2.50 10 5 10 15 20 25 30 0 Gate Voltage, VG (V) Input Power, PIN (dBm) Power Added Efficiency, add (%) 1.6 2000 Drain Current, IDS (mA) TRANSCONDUCTANCE AND DRAIN CURRENT vs. GATE VOLTAGE OUTPUT POWER, DRAIN CURRENT, and POWER ADDED EFFICIENCY vs. INPUT POWER NE5520279A TYPICAL PERFORMANCE CURVES (TA = 25C) 35 VDS = 3.5 V IDQ = 100 mA freq = 850 MHz 25 IDS 20 add 15 2000 30 POUT 1500 1000 500 100 250 50 10 0 5 10 15 20 25 0 Input Power, PIN (dBm) P.C.B. LAYOUT (Units in mm) 79A PACKAGE 4.0 1.7 Drain Gate 5.9 1.2 Source Through hole 0.2 x 33 0.5 6.1 0.5 Note: Use rosin or other material to prevent solder from penetrating through-holes. EXCLUSIVE NORTH AMERICAN AGENT FOR NEC RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES * Headquarters * 4590 Patrick Henry Drive * Santa Clara, CA 95054-1817 * (408) 988-3500 * Telex 34-6393 * FAX (408) 988-0279 Internet: http://WWW.CEL.COM DATA SUBJECT TO CHANGE WITHOUT NOTICE 09/19/2001 0.5 1.0 Drain Current, IDS (mA) Power Added Efficiency, add (%) OUTPUT POWER, DRAIN CURRENT, and POWER ADDED EFFICIENCY vs. INPUT POWER Output Power, POUT (dBm) |
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